InGaAs/Si avalanche photodiodes fabricated by wafer bonding

被引：7

作者：

Pan, Z ^{[1
]}

Bitter, M ^{[1
]}

Pauchard, A ^{[1
]}

Hummel, S ^{[1
]}

Feng, T ^{[1
]}

Kang, YM ^{[1
]}

Mages, P ^{[1
]}

Yu, PKL ^{[1
]}

Lo, YH ^{[1
]}

机构：

[1] Nova Crystals Inc, San Jose, CA 95126 USA

来源：

APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS | 2002年 / 4905卷

关键词：

avalanche photodiode; wafer bonding; dark current; excess noise factor;

D O I：

10.1117/12.481018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report here on wafer-bonded InGaAs/Si avalanche photodiodes (APDs) demonstrating very low excess noise factors that were fabricated using a high-yield, wafer-scale bonding process. The bonding interface quality was evaluated using high-resolution x-ray diffraction and dark current measurements. Measured dark currents on 20 mum diameter mesas are 25 nA and 170 nA at gains of 10 and 50, respectively. Low excess noise factors, which are predicted due to the superior noise properties of Si as a multiplication layer, were measured to be more than 3 times lower than commercial InGaAs/InP APDs at a gain of 10, and more than 9 times lower at a gain of 50. The corresponding electron/hole ionization coefficient ratio k in these devices is as low as 0.02.

引用

页码：322 / 325

页数：4

共 7 条

[1]

CLARK WR, 1999, OPT FIB COMM C

[2] High gain-bandwidth-product silicon heterointerface photodetector [J].

Hawkins, AR ;

Wu, WS ;

Abraham, P ;

Streubel, K ;

Bowers, JE .

APPLIED PHYSICS LETTERS, 1997, 70 (03) :303-305

[3]

Kang Y, 2001, IEEE LEOS ANN MTG, P772, DOI 10.1109/LEOS.2001.969043

[4] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[5] Wafer-bonded InGaAs/silicon avalanche photodiodes [J].

Pauchard, A ;

Mages, P ;

Kang, Y ;

Bitter, M ;

Pan, Z ;

Sengupta, D ;

Hummel, S ;

Lo, YH ;

Yu, PKL .

PHOTODETECTOR MATERIALS AND DEVICES VII, 2002, 4650 :37-43

[6]

Pauchard A., 2002, Optical Fiber Communications Conference. (OFC). Postconference Technical Digest (IEEE Cat. No.02CH37339), P345, DOI 10.1109/OFC.2002.1036407

[7]

SATO K, 2002, OPT FIB COMM C

← 1 →