Large-signal vector characterization of LDMOS devices for analysis and design of broadband Doherty high-power amplifiers

被引:4
|
作者
Cidronali, Alessandro [1 ]
Collodi, Giovanni [1 ]
机构
[1] Univ Florence, Dept Informat Engn, VS Marta 3, I-50139 Florence, Italy
关键词
Broadband PAs; Doherty power amplifiers; large-signal vector networkanalysis; silicon LDMOS; X-parameters; FRACTIONAL BANDWIDTH; LINE;
D O I
10.1017/S1759078719000709
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a novel broadband large-signal vector characterization technique, suitable for high-power broadband Doherty amplifiers (DPAs). It consists of characterizing the DPA three-port sub-circuit composed of the main and peak power devices that are inter-connected by the input network. We discuss a suitable way to extract the three-port X-parameters of a DPA sub-circuit, which is based on a pair of high-power Silicon Laterally Diffused MOSFETs (LDMOSs) for UHF applications. It is then applied to the analysis of a high-power broadband DPA developed on the basis of the same DPA sub-circuit. This technique permits the broadband analysis of the operation of the DPA, as well as to get insight on the load modulation for both the peak and main devices, while they mutually interact through the input network. Measurements and simulated data in the 700-960 MHz bandwidth are compared so as to demonstrate the feasibility of three-port X-parameters characterization for high-power DPAs in UHF band.
引用
收藏
页码:666 / 675
页数:10
相关论文
共 50 条
  • [31] Large-Signal Modeling Methodology for GaN HEMTs for RF Switching-Mode Power Amplifiers Design
    Jarndal, Anwar
    Aflaki, Pouya
    Negra, Renato
    Kouki, Ammar B.
    Ghannouchi, Fadhel M.
    INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2011, 21 (01) : 45 - 51
  • [32] Analysis of GaN HEMTs for Broadband High-Power Amplifier Design
    Musser, M.
    Quay, R.
    van Raay, F.
    Mikulla, M.
    Ambacher, O.
    2011 6TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE, 2011, : 128 - 131
  • [33] LARGE-SIGNAL DISTORTION IN HIGH LINEAR COMPLEMENTARY EMITTER FOLLOWER DEVICES FOR BROAD-BAND ANTENNA AMPLIFIERS
    LINDENMEIER, H
    POPP, R
    NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1975, 28 (01): : 1 - 6
  • [34] Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design
    Jarndal, Anwar
    Aflaki, Pouya
    Degachi, Louay
    Birafane, Ahmed
    Kouki, Ammar
    Negra, Renato
    Ghannouchi, Fadhel M.
    SOLID-STATE ELECTRONICS, 2010, 54 (07) : 696 - 700
  • [35] A Verilog-A Large-Signal GaN HEMT Model for High Power Amplifier Design
    Kharabi, F.
    McMacken, J. R. F.
    Gering, J. M.
    2010 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2010,
  • [36] High frequency inverter design for large-signal characterization of domestic induction heating load
    Puyal, D.
    Bernal, C.
    Burdio, J. M.
    Acero, J.
    Millan, I.
    IECON 2006 - 32ND ANNUAL CONFERENCE ON IEEE INDUSTRIAL ELECTRONICS, VOLS 1-11, 2006, : 1491 - +
  • [37] Large-Signal Model for AlGaN/GaN HEMT for Designing High Power Amplifiers of Next Generation Wireless Communication Systems
    Jarndal, Anwar
    Kompa, Guenter
    ICSPC: 2007 IEEE INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING AND COMMUNICATIONS, VOLS 1-3, PROCEEDINGS, 2007, : 77 - +
  • [38] A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design
    Xu, Yuehang
    Fu, Wenli
    Wang, Changsi
    Ren, Chunjiang
    Lu, Haiyan
    Zheng, Weibin
    Yu, Xuming
    Yan, Bo
    Xu, Ruimin
    JOURNAL OF ELECTROMAGNETIC WAVES AND APPLICATIONS, 2014, 28 (15) : 1888 - 1895
  • [39] Frequency Analysis and Multiline Implementation of Compensated Impedance Inverter for Wideband Doherty High-Power Amplifier Design
    Cidronali, Alessandro
    Maddio, Stefano
    Giovannelli, Niccolo
    Collodi, Giovanni
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (05) : 1359 - 1372
  • [40] Influence of collector region design on high-frequency large-signal performance of SiGe power HBTs
    Wang, Guogong
    Ma, Zhenqiang
    2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2007, : 9 - +