Charge Sensing and Controllable Tunnel Coupling in a Si/SiGe Double Quantum Dot

被引：85

作者：

Simmons, C. B. ^{[1
]}

Thalakulam, Madhu ^{[1
]}

Rosemeyer, B. M. ^{[1
]}

Van Bael, B. J. ^{[1
]}

Sackmann, E. K. ^{[1
]}

Savage, D. E. ^{[1
]}

Lagally, M. G. ^{[1
]}

Joynt, R. ^{[1
]}

Friesen, Mark ^{[1
]}

Coppersmith, S. N. ^{[1
]}

Eriksson, M. A. ^{[1
]}

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 09期

基金：

美国国家科学基金会;

关键词：

SINGLE-ELECTRON SPIN; COMPUTATION; TRANSPORT;

D O I：

10.1021/nl9014974

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report integrated charge sensing measurements on a Si/SIGe double quantum dot. The quantum dot Is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling t between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an Important step toward controlling spin qubits in silicon quantum dots.

引用

收藏

页码：3234 / 3238

页数：5

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