Strain Effect on the Electronic and Optical Properties of CdSe Nanowires

被引:19
作者
Huan, Hao [1 ]
Chen, Li [2 ]
Ye, Xiang [1 ]
机构
[1] Shanghai Normal Univ, Dept Phys, Shanghai 200234, Peoples R China
[2] MCPHS Univ, Sch Arts & Sci, Boston, MA 02115 USA
来源
NANOSCALE RESEARCH LETTERS | 2017年 / 12卷
关键词
Strain; Cadmium selenide; Nanowire; Electronic properties; Optical properties; NANOCRYSTALS; NANOSPHERES; DEPENDENCE; NANOSHEETS; NANORODS; GROWTH; CDTE;
D O I
10.1186/s11671-017-1952-9
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
First-principles density functional theory (DFT) simulations were carried out to study the strain dependence on the electronic and optical properties of cadmium selenide (CdSe) nanowires (NWs). The band structures, effective masses of electron and holes, dielectric properties, and other optical properties (such as extinction coefficient, optical reflectivity, and absorption coefficient) were calculated under both compressive and tensile uniaxial strains. Size-dependence was also discussed by comparing results among CdSe wires with various diameters. Simulation results show that an interesting band-switch behavior occurs at the valence bands regardless of size. The cause and the consequences of such band-switch behavior were also studied. Further strain dependence on corresponding electronic and optical properties were examined as well. Our results provide insights to possible mechanical tuning via strain on the electronic and optical properties of CdSe NWs.
引用
收藏
页数:6
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共 43 条
[11]   Preparation of hollow CdSe nanospheres [J].
Hu, Y ;
Chen, JF ;
Chen, WM ;
Ning, JQ .
MATERIALS LETTERS, 2004, 58 (22-23) :2911-2913
[12]   Density functional theoretical determinations of electronic and optical properties of nanowires and bulks for CdS and CdSe [J].
Huang, S. -P. ;
Cheng, W. -D. ;
Wu, D. -S. ;
Hu, J. -M. ;
Shen, J. ;
Xie, Z. ;
Zhang, H. ;
Gong, Y. -J. .
APPLIED PHYSICS LETTERS, 2007, 90 (03)
[13]   New synthetic method of semiconducting nanorods and nanowires CdE (E = S and Se) by γ-irradiation [J].
Jo, Song Ja ;
Lee, Don Keun ;
Kim, Min-Sung ;
Kim, Young Hwan ;
Kang, Young Soo .
CURRENT APPLIED PHYSICS, 2006, 6 (04) :781-785
[14]   Ultrathin CdSe nanowire field-effect transistors [J].
Khandelwal, A ;
Jena, D ;
Grebinski, JW ;
Hull, KL ;
Kuno, MK .
JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (01) :170-172
[15]   SIZE DEPENDENCE OF ELECTRON-PHONON COUPLING IN SEMICONDUCTOR NANOSPHERES - THE CASE OF CDSE [J].
KLEIN, MC ;
HACHE, F ;
RICARD, D ;
FLYTZANIS, C .
PHYSICAL REVIEW B, 1990, 42 (17) :11123-11132
[16]   Large scale synthesis of cadmium selenide nanowires using template synthesis technique and their characterization [J].
Kumar, Sanjeev ;
Kumar, Vijay ;
Sharma, Satinder K. ;
Sharma, S. K. ;
Chakarvarti, S. K. .
SUPERLATTICES AND MICROSTRUCTURES, 2010, 48 (01) :66-71
[17]   X-ray investigation of CdSe nanowires [J].
Kurtulus, Oezguel ;
Li, Zhen ;
Mews, Alf ;
Pietsch, Ullrich .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (08) :1752-1756
[18]   Effects of electric field on the electronic structure and optical properties of quantum rods with wurtzite structure [J].
Li, XZ ;
Xia, JB .
PHYSICAL REVIEW B, 2003, 68 (16) :1653161-1653167
[19]   Controlled Synthesis of CdSe Nanowires by Solution-Liquid-Solid Method [J].
Li, Zhen ;
Kurtulus, Oezguel ;
Fu, Nan ;
Wang, Zhe ;
Kornowski, Andreas ;
Pietsch, Ullrich ;
Mews, Alf .
ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (22) :3650-3661
[20]   ON THE LIMITED MEMORY BFGS METHOD FOR LARGE-SCALE OPTIMIZATION [J].
LIU, DC ;
NOCEDAL, J .
MATHEMATICAL PROGRAMMING, 1989, 45 (03) :503-528