Synergistic Effects of Total Ionizing Dose on SEU Sensitive SRAMs

被引：16

作者：

Koga, R. ^{[1
]}

Yu, P. ^{[1
]}

Crawford, K. ^{[1
]}

George, J. ^{[1
]}

Zakrzcwski, M. ^{[1
]}

机构：

[1] Aerosp Corp, El Segundo, CA 90245 USA

来源：

2009 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD | 2009年

关键词：

D O I：

10.1109/REDW.2009.5336303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Synergistic effects of total ionizing dose and particle fluence on SEU sensitivity of static random access memories have been investigated. The memory imprint effect has been observed to yield varying results.

引用

页码：127 / 132

页数：6

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