High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

被引：49

作者：

Ishii, Hiroyuki ^{[1
]}

Miyata, Noriyuki ^{[1
]}

Urabe, Yuji ^{[1
]}

Itatani, Taro ^{[1
]}

Yasuda, Tetsuji ^{[1
]}

Yamada, Hisashi ^{[2
]}

Fukuhara, Noboru ^{[2
]}

Hata, Masahiko ^{[2
]}

Deura, Momoko ^{[3
]}

Sugiyama, Masakazu ^{[3
]}

Takenaka, Mitsuru ^{[3
]}

Takagi, Shinichi ^{[3
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Sumitomo Chem Co Ltd, Tsukuba, Ibaraki 3003294, Japan

[3] Univ Tokyo, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 12期

关键词：

GATE STACK; MOSFETS; AL2O3;

D O I：

10.1143/APEX.2.121101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated on the (111)A surface of In(0.53)Ga(0.47)As for the first time. Al(2)O(3) gate dielectrics were formed by atomic layer deposition on sulfur-stabilized InGaAs surfaces. The MISFET on (111)A demonstrated channel mobility higher than that on (100), achieving more than 100% improvement with respect to Si even at a high surface carrier concentration. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.121101

引用

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