Low-temperature growth of epitaxial Si films by atmospheric pressure plasma chemical vapor deposition using porous carbon electrode

被引:39
作者
Ohmi, Hiromasa [1 ]
Kakiuchi, Hiroaki [1 ]
Tawara, Naotaka [1 ]
Wakamiya, Takuya [1 ]
Shimura, Takayoshi [1 ]
Watanabe, Heiji [1 ]
Yasutake, Kiyoshi [1 ]
机构
[1] Osaka Univ, Grad Sch Engn, Dept Precis Sci & Technol, Suita, Osaka 5650871, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 10B期
关键词
atmospheric pressure plasma; chemical vapor deposition; epitaxial silicon wafer; low-temperature growth; porous carbon electrode;
D O I
10.1143/JJAP.45.8424
中图分类号
O59 [应用物理学];
学科分类号
摘要
The low-temperature growth of epitaxial Si films by atmospheric pressure plasma chemical vapor deposition (AP-PCVD) was investigated. A 150 MHz very high frequency (VHF) power supply was used to generate an atmospheric pressure plasma of gas mixtures containing He, H-2, and SiH4. Two types of electrode (i.e., cylindrical rotary and porous carbon electrodes) were used in plasma generation. When a cylindrical rotary electrode was used, polycrystalline Si growth was inevitable at the film edge on the upstream side. This is due to the variation in deposition rate along the gas flow direction, which is extremely high at the plasma/atmosphere interface on the upstream side. To solve this problem, we developed a novel porous carbon electrode where process. gas molecules are directly supplied into the plasma region through a porous carbon plate a distance (0.8 mm) away from the substrate surface. Using such a porous carbon electrode, we successfully grew a defect-free epitaxial Si film on the entire surface of a 4 in. Si wafer at 600 degrees C. The average growth rate was 0.25-0.3 mu m/min, which is as high as that obtained by thermal CVD at 900 degrees C. The epitaxial Si films grown at 600 degrees C were characterized by various methods, including transmission electron microscopy, atomic force microscopy, secondary ion mass spectrometry, and selective etching. The influence of adsorbed impurities in the porous carbon material on the quality of epitaxial Si films was also investigated.
引用
收藏
页码:8424 / 8429
页数:6
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