Load-locked dc high voltage GaAs photogun with an inverted-geometry ceramic insulator

被引：53

作者：

Adderley, P. A. ^{[1
]}

Clark, J. ^{[1
]}

Grames, J. ^{[1
]}

Hansknecht, J. ^{[1
]}

Surles-Law, K. ^{[1
]}

Machie, D. ^{[1
]}

Poelker, M. ^{[1
]}

Stutzman, M. L. ^{[1
]}

Suleiman, R. ^{[1
]}

机构：

[1] Thomas Jefferson Natl Accelerator Facil, Newport News, VA 23606 USA

来源：

PHYSICAL REVIEW SPECIAL TOPICS-ACCELERATORS AND BEAMS | 2010年 / 13卷 / 01期

关键词：

GUN;

D O I：

10.1103/PhysRevSTAB.13.010101

中图分类号：

O57 [原子核物理学、高能物理学];

学科分类号：

070202 ;

摘要：

A new dc high voltage spin-polarized photoelectron gun has been constructed that employs a compact inverted-geometry ceramic insulator. Photogun performance at 100 kV bias voltage is summarized.

引用

页数：7

共 23 条

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