Load-locked dc high voltage GaAs photogun with an inverted-geometry ceramic insulator

被引：52
作者：
Adderley, P. A. [1 ]
Clark, J. [1 ]
Grames, J. [1 ]
Hansknecht, J. [1 ]
Surles-Law, K. [1 ]
Machie, D. [1 ]
Poelker, M. [1 ]
Stutzman, M. L. [1 ]
Suleiman, R. [1 ]
机构：
[1] Thomas Jefferson Natl Accelerator Facil, Newport News, VA 23606 USA
来源：
PHYSICAL REVIEW SPECIAL TOPICS-ACCELERATORS AND BEAMS | 2010年 / 13卷 / 01期
关键词：
GUN;
D O I：
10.1103/PhysRevSTAB.13.010101
中图分类号：
O57 [原子核物理学、高能物理学];
学科分类号：
070202 ;
摘要：
A new dc high voltage spin-polarized photoelectron gun has been constructed that employs a compact inverted-geometry ceramic insulator. Photogun performance at 100 kV bias voltage is summarized.
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页数：7
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