Oriented Growth of Pb1-xSnxTe Nanowire Arrays for Integration of Flexible Infrared Detectors

被引：45
作者：
Wang, Qisheng [1 ]
Li, Jie [1 ]
Lei, Yin [1 ]
Wen, Yao [1 ]
Wang, Zhenxing [1 ]
Zhan, Xueying [1 ]
Wang, Feng [1 ]
Wang, Fengmei [1 ]
Huang, Yun [1 ]
Xu, Kai [1 ]
He, Jun [1 ]
机构：
[1] Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
来源：
ADVANCED MATERIALS | 2016年 / 28卷 / 18期
基金：
中国国家自然科学基金; 北京市自然科学基金;
关键词：
GUIDED GROWTH; PHOTODETECTORS; NANOSTRUCTURES; DEVICES;
D O I：
10.1002/adma.201506338
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Assembling nanowires into highly ordered arrays is crucial for developing integration circuits. Oriented growth of mid-infrared Pb1-xSnxTe nanowire arrays on bendable mica, extending the function of existing nanowire arrays, is reported. The flexible photodetectors of these nanowire arrays show a high photoresponsivity of 276 A W-1 (at 800 nm), which is higher than many previously reported infrared nanosensors.
引用
收藏
页码：3596 / +
页数：7
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