Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodes

We have succeeded in demonstrating continuous-wave (CW) operation of GaInNAs-GaAs single-quantum-well (SQW) laser diodes st room temperature (RT). The threshold current density was about 1.4 kA/cm(2), and the operating wavelength was approximately 1.18 mu m far a broad-stripe,geometry. Evenly spaced multiple longitudinal modes were clearly observed in the lasing spectrum, The full-angle-half-power far-field beam divergence measured parallel and perpendicular to the junction plane was 4.5 degrees and 45 degrees, respectively. A high characteristic temperature (T-0) of 126 K under CW operation and a small wavelength shift per ambient temperature change of 0.48 nm/degrees C under pulsed operation were obtained, These experimental results indicate the applicability of GaInNAs to long-wavelength laser diodes with excellent high-temperature performance.