Dependence of the photoacoustic signal intensity on modulation frequency for CdInGaS4 crystals under a transmission detection configuration

被引：11

作者：

Shen, Q ^{[1
]}

Toyoda, T ^{[1
]}

机构：

[1] Univ Electrocommun, Dept Appl Phys & Chem, Chofu, Tokyo 1828585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 2A期

关键词：

photoacoustic (PA) technique; CdInGaS4; thermal diffusivity; carrier diffusivity; excess-carrier lifetime; surface recombination velocity;

D O I：

10.1143/JJAP.39.511

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dependence of the photoacoustic (PA) signals on the modulation frequency was measured for CdInGaS4 crystals in the reflection and transmission detection configurations (RDC and TDC). The PA signals originate from both the thermal diffusion and photo-excited carrier diffusion processes under TDC. The two processes can be separated by changing the modulation frequency of the excited light. The experimental results show the possibility of characterizing the thermal and electronic properties of CdInCaS4 crystals by the PA technique in TDC.

引用

页码：511 / 512

页数：2