Epitaxial growth and magnetic properties of single-crystal Co2MnGe Heusler alloy films on GaAs (001)

被引：153
|
作者：
Ambrose, T [1 ]
Krebs, JJ [1 ]
Prinz, GA [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 22期
关键词：
D O I：
10.1063/1.126606
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Single-crystal Co2MnGe Heusler alloy films were epitaxially grown on GaAs (001) substrates by molecular beam epitaxy. In situ reflection high-energy electron diffraction patterns and Auger spectroscopy confirmed the high-quality growth and stoichiometry. At 5 K, a saturation magnetization of 1000 emu/cm(3) was measured. In-plane ferromagnetic resonance shows narrow linewidths and four-fold plus uniaxial anisotropy. A room-temperature resistivity of 115 mu Omega cm has also been determined. The temperature dependence of the resistivity shows metallic behavior down to low temperatures. (C) 2000 American Institute of Physics. [S0003-6951(00)04222-4].
引用
收藏
页码：3280 / 3282
页数：3
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