Structural investigation of hierarchically self-assembled GaAs/AlGaAs quantum dots

被引：2
作者：
Lenz, A.
Timm, R.
Eisele, H.
Ivanova, L.
Martin, D.
Vossebuerger, V.
Rastelli, A.
Schmidt, O. G.
Daehne, M.
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2006年 / 243卷 / 15期
关键词：
D O I：
10.1002/pssb.200671597
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Recent investigations of self-organized unstrained inverted GaAs/AlGaAs quantum dots, prepared by a combination of Stranski-Krastanov growth mode and an in situ etching technique, show GaAs quantum dots with large confinement energy and high size homogeneity. Here we present first cross-sectional scanning tunneling microscopy data of these quantum dots, characterized by a lateral extension of about 35 nm, heights of about 5-6 nm, and a reversed truncated pyramidal shape. We further observe a decomposition of the AlGaAs host layers and a roughening of the AlGaAs/GaAs interfaces. (C) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3976 / 3980
页数：5
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