First principles study of electronic and optical properties of InAs

被引：16

作者：

Feng, Zhenbao ^{[1
]}

Hu, Haiquan ^{[1
]}

Cui, Shouxin ^{[1
]}

Wang, Wenjun ^{[1
]}

Lu, Canyun ^{[1
]}

机构：

[1] Liaocheng Univ, Sch Phys Sci & Informat Technol, Liaocheng 252059, Shandong, Peoples R China

来源：

CENTRAL EUROPEAN JOURNAL OF PHYSICS | 2009年 / 7卷 / 04期

基金：

中国国家自然科学基金;

关键词：

FP-LAPW plus lo; electronic structure; optical properties; GENERALIZED GRADIENT APPROXIMATION; III-V; SEMICONDUCTORS; PARAMETERS; GAP; INP;

D O I：

10.2478/s11534-009-0045-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic and optical properties of InAs in core-level spectra are calculated using the full-potential linearized augmented plane wave plus local orbitials (FP-LAPW+lo) method. The real and imaginary parts of the dielectric function epsilon(omega), the optical absorption coefficient l(omega), the reflectivity R(omega), the refractive index n(omega), and the extinction coefficient k(omega) are calculated. All these values are in good agreement with the experimental data. The effect of spin-orbit coupling on optical properties is also investigated and found to be quite small.

引用

页码：786 / 790

页数：5

共 18 条

[1] Linear optical properties of solids within the full-potential linearized augmented planewave method [J].

Ambrosch-Draxl, Claudia ;

Sofo, Jorge O. .

COMPUTER PHYSICS COMMUNICATIONS, 2006, 175 (01) :1-14

[2] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[3] Crystal growth and below-bandgap optical absorption studies in InAs for non-linear optic applications [J].

Bhat, R. ;

Dutta, P. S. ;

Guha, S. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) :1910-1916

[4]

Blaha P., 2001, WIEN2K

[5] Room-temperature electron spin relaxation in bulk InAs [J].

Boggess, TF ;

Olesberg, JT ;

Yu, C ;

Flatté, ME ;

Lau, WH .

APPLIED PHYSICS LETTERS, 2000, 77 (09) :1333-1335

[6] APPLICATIONS OF ENGEL AND VOSKO GENERALIZED GRADIENT APPROXIMATION IN SOLIDS [J].

DUFEK, P ;

BLAHA, P ;

SCHWARZ, K .

PHYSICAL REVIEW B, 1994, 50 (11) :7279-7283

[7] EXACT EXCHANGE-ONLY POTENTIALS AND THE VIRIAL RELATION AS MICROSCOPIC CRITERIA FOR GENERALIZED GRADIENT APPROXIMATIONS [J].

ENGEL, E ;

VOSKO, SH .

PHYSICAL REVIEW B, 1993, 47 (20) :13164-13174

[8] ELECTRONIC AND STRUCTURAL-PROPERTIES OF RUO2 [J].

GLASSFORD, KM ;

CHELIKOWSKY, JR .

PHYSICAL REVIEW B, 1993, 47 (04) :1732-1741

[9] Electronic, linear, and nonlinear optical properties of III-V indium compound semiconductors [J].

Hussain Reshak, Ali .

JOURNAL OF CHEMICAL PHYSICS, 2006, 125 (03)

[10] Low-temperature photoluminescence of epitaxial InAs [J].

Lacroix, Y ;

Tran, CA ;

Watkins, SP ;

Thewalt, MLW .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (11) :6416-6424

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