High frequency dielectric properties distribution of BiFeO3 thin film using near-field microwave microscopy

被引:10
|
作者
Zhang, Xiao-Yu [1 ]
Wang, Xuan-Cong [2 ]
Xu, Feng [1 ]
Ma, Yun-Gui [1 ]
Ong, C. K. [2 ]
机构
[1] Natl Univ Singapore, Temasek Labs, Singapore 119260, Singapore
[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
来源
REVIEW OF SCIENTIFIC INSTRUMENTS | 2009年 / 80卷 / 11期
关键词
D O I
10.1063/1.3258201
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A near-field scanning microwave microscopy (NSMM) is. applied to investigate the local perpendicular dielectric information of single-phase multiferroic BiFeO3 thin film and single crystal LaAlO3 material. Our NSMM is composed of a vector network analyzer and a simple open-ended coaxial probe, which is quite different from the commercial probe with a lambda/4 coaxial resonator. The local permittivity is calculated quantitatively according to resonance frequency shift under the quasistatic microwave perturbation theory. We make use of the magnitude of reflection loss S-11 to construct an image reflecting the distribution of dielectric constant of a material. A homogeneous permittivity is observed in LaAlO3 material and the inhomogeneous permittivity epsilon=215-250 for BiFeO3 film is depicted from the change of feedback signal S-11 over an area of 100 x 100 mu m(2). (C) 2009 American Institute of Physics. [doi:10.1063/1.3258201]
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页数:4
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