A new method for cleaning the surface of ultra high-purity iron by high-purity ozone exposure and UV irradiation

被引:6
作者
Suzuki, S [1 ]
Ichimura, S [1 ]
Kurokawa, A [1 ]
Ishikawa, Y [1 ]
Isshiki, M [1 ]
Waseda, Y [1 ]
机构
[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
来源
MATERIALS TRANSACTIONS JIM | 1997年 / 38卷 / 05期
关键词
ozone; ultra high-purity iron; surface cleaning; oxidation; X-ray photoelectron spectroscopy;
D O I
10.2320/matertrans1989.38.451
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new method by applying high-purity ozone exposure and ultraviolet (UV) irradiation has been used for cleaning the surface of ultra high-purity iron with a carbon contaminated layer. The amount and chemical state of elements on the specimen surface were characterized by X-ray photoelectron spectroscopy. The intensity of the C 1s XPS peak due to carbon contamination was found to decrease with increasing ozone exposure al room temperature. UV irradiation during ozone exposure enhanced the cleaning rare. The XPS results show that contaminated carbon is mainly classified into major aliphatic carbon and minor carboxyl carbon, and their ratio depends upon the condition of ozone exposure. The role of ozone exposure and UV irradiation was discussed with respect to surface cleaning.
引用
收藏
页码:451 / 456
页数:6
相关论文
共 18 条
[1]  
BRIGGS D, 1983, PRACTICAL SURFACE AN, V1, P359
[2]  
DILKS A, 1981, ELECTRON SPECTROSCOP, V4, P277
[3]  
HARIMAYA S, 1995, TETSU TO HAGANE, V81, P10
[4]   EVALUATION OF NEW OZONE GENERATOR DESIGNED FOR OXIDE FILM FORMATION BY MOLECULAR-BEAM EPITAXY METHOD [J].
ICHIMURA, S ;
HOSOKAWA, S ;
NONAKA, H ;
ARAI, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (04) :2369-2373
[5]   PREPARATION OF HIGH-PURITY IRON AND ITS RECRYSTALLIZATION TEMPERATURE [J].
ISSHIKI, M ;
IGAKI, K .
TRANSACTIONS OF THE JAPAN INSTITUTE OF METALS, 1977, 18 (05) :412-422
[6]   X-ray photoelectron spectroscopy (XPS) analysis of oxide formation on silicon with high-purity ozone [J].
Kurokawa, A ;
Ichimura, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (12A) :L1606-L1608
[7]   High purity ozone oxidation on hydrogen passivated silicon surface [J].
Kurokawa, A ;
Ichimura, S .
APPLIED SURFACE SCIENCE, 1996, 100 :436-439
[8]  
MOUDLER JF, 1993, XRAY PHOTOELECTRON S, P219
[9]   SEPARATION OF COBALT AND NICKEL BY OZONE OXIDATION [J].
NISHIMURA, T ;
UMETSU, Y .
HYDROMETALLURGY, 1992, 30 (1-3) :483-497
[10]   Development of oxidation sources in preparation of high-T-c oxide superconductor thin films using the molecular beam epitaxy method [J].
Nonaka, H ;
Ichimura, S ;
Shimizu, T ;
Arai, K .
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1995, 20 (04) :285-338