MoS2 edges and heterophase interfaces: energy, structure and phase engineering

被引:21
作者
Zhou, Songsong [1 ]
Han, Jian [1 ]
Sun, Jianwei [2 ]
Srolovitz, David J. [1 ,3 ]
机构
[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[2] Univ Texas El Paso, Dept Phys, El Paso, TX 79968 USA
[3] Univ Penn, Dept Mech Engn & Appl Mech, Philadelphia, PA 19104 USA
来源
2D MATERIALS | 2017年 / 4卷 / 02期
关键词
edges; interfaces; phase transitions; density functional theory calculations; monolayer molybdenum disulfide; GENERALIZED GRADIENT APPROXIMATION; AUGMENTED-WAVE METHOD; SINGLE-LAYER MOS2; DICHALCOGENIDE MONOLAYERS; ELECTRONIC TRANSPORT; BASIS-SET; TRANSITION; HETEROSTRUCTURES; TRANSISTORS; EVOLUTION;
D O I
10.1088/2053-1583/aa6d22
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The transition metal dichalcogenides exhibit polymorphism; i.e. both 2H and 1T' crystal structures, each with unique electronic properties. These two phases can coexist within the same monolayer microstructure, producing 2H/1T' interfaces. Here we report a systematic investigation of the energetics of the experimentally most important MoS2 heterophase interfaces and edges. The stable interface and edge structures change with chemical potential (these edges/interfaces are usually non-stoichiometric). Stable edges tend to be those of highest atomic density and the stable interfaces correspond to those with local atomic structure very similar to the 2H crystal. The interfacial energies are lower than those of the edges, and the 1T' edges have lower energy than the 2H edges. Because the 1T' edges have much lower energy than the 2H edges, a sufficiently narrow 1T' ribbon will be more stable than the corresponding 2H ribbon (this critical width is much larger in MoTe2 than in MoS2). Similarly, a large 2H flake have an equilibrium strip of 1T' along its edge (again this effect is much larger in MoTe2 than in MoS2). Application of tensile strains can increase the width of the stable 1T' strip or the critical thickness below which a ribbon favors the 1T' structure. These effects provide a means to phase engineer transition metal dichalcogenide microstructures.
引用
收藏
页数:10
相关论文
共 50 条
  • [31] Cohesive energy in graphene/MoS2 heterostructures
    Minh-Quy Le
    MECCANICA, 2017, 52 (1-2) : 307 - 315
  • [32] Mechanism for Liquid Phase Exfoliation of MoS2
    Jawaid, Ali
    Nepal, Dhriti
    Park, Kyoungweon
    Jespersen, Michael
    Qualley, Anthony
    Mirau, Peter
    Drummy, Lawrence F.
    Vaia, Richard A.
    CHEMISTRY OF MATERIALS, 2016, 28 (01) : 337 - 348
  • [33] Two-dimensional lateral heterojunction through bandgap engineering of MoS2 via oxygen plasma
    Choudhary, Nitin
    Islam, Muhammad R.
    Kang, Narae
    Tetard, Laurene
    Jung, Yeonwoong
    Khondaker, Saiful I.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 28 (36)
  • [34] Substrate induced anomalous electrostatic and photoluminescence propeties of monolayer MoS2 edges
    Hao, Song
    Yang, Bingchu
    Yuan, Jingye
    Gao, Yongli
    SOLID STATE COMMUNICATIONS, 2017, 249 : 1 - 6
  • [35] Bending energy of 2D materials: graphene, MoS2 and imogolite
    Gonzalez, Rafael I.
    Valencia, Felipe J.
    Rogan, Jose
    Valdivia, Juan Alejandro
    Sofo, Jorge
    Kiwi, Miguel
    Munoz, Francisco
    RSC ADVANCES, 2018, 8 (09): : 4577 - 4583
  • [36] Abnormal intensity and polarization of Raman scattered light at edges of layered MoS2
    Zhao, Yan
    Zheng, Liheng
    Han, Shiyi
    Xu, Bo
    Fang, Zheyu
    Zhang, Jin
    Tong, Lianming
    NANO RESEARCH, 2022, 15 (07) : 6416 - 6421
  • [37] Abnormal intensity and polarization of Raman scattered light at edges of layered MoS2
    Yan Zhao
    Liheng Zheng
    Shiyi Han
    Bo Xu
    Zheyu Fang
    Jin Zhang
    Lianming Tong
    Nano Research, 2022, 15 : 6416 - 6421
  • [38] Narrow-Gap Quantum Wires Arising from the Edges of Monolayer MoS2 Synthesized on Graphene
    Shi, Jianping
    Zhou, Xiebo
    Han, Gao-Feng
    Liu, Mengxi
    Ma, Donglin
    Sun, Jingyu
    Li, Cong
    Ji, Qingqing
    Zhang, Yu
    Song, Xiuju
    Lang, Xing-You
    Jiang, Qing
    Liu, Zhongfan
    Zhang, Yanfeng
    ADVANCED MATERIALS INTERFACES, 2016, 3 (17):
  • [39] Engineering Phase Transformation of MoS2/RGO by N-doping as an Excellent Microwave Absorber
    Guo, Huiqiao
    Wang, Lei
    You, Wenbin
    Yang, Liting
    Li, Xiao
    Chen, Guanyu
    Wu, Zhengchen
    Qian, Xiang
    Wang, Min
    Che, Renchao
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (14) : 16831 - 16840
  • [40] Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2
    Bhattacharjee, Shubhadeep
    Vatsyayan, Ritwik
    Ganapathi, Kolla Lakshmi
    Ravindra, Pramod
    Mohan, Sangeneni
    Bhat, Navakanta
    ADVANCED ELECTRONIC MATERIALS, 2019, 5 (06)