Quantum oscillations in metallic Sb2Te2Se topological insulator

被引:27
作者
Shrestha, K. [1 ]
Marinova, V. [2 ]
Graf, D. [3 ]
Lorenz, B. [4 ,5 ]
Chu, C. W. [4 ,5 ,6 ]
机构
[1] Idaho Natl Lab, 2525 Fremont Ave, Idaho Falls, ID 83401 USA
[2] Bulgarian Acad Sci, Inst Opt Mat & Technol, Acad G Bonchev St 109, BU-1113 Sofia, Bulgaria
[3] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA
[4] Univ Houston, TCSUH, 3201 Cullen Blvd, Houston, TX 77204 USA
[5] Univ Houston, Dept Phys, 3201 Cullen Blvd, Houston, TX 77204 USA
[6] Lawrence Berkeley Natl Lab, 1 Cyclotron Rd, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
SURFACE-STATES; CRYSTALS; BI2TE3;
D O I
10.1103/PhysRevB.95.075102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the magnetotransport properties of the metallic, p-type Sb2Te2Se, which is a topological insulator. Magnetoresistance shows Shubnikov-de Haas oscillations in fields above B = 15 T. The maxima and minima positions of oscillations measured at different tilt angles with respect to the B direction align with the normal component of field Bcos theta, implying the existence of a two-dimensional Fermi surface in Sb2Te2Se. The value of the Berry phase beta determined from a Landau level fan diagram is very close to 0.5, further suggesting that the oscillations result from topological surface states. From Lifshitz-Kosevich analyses, the position of the Fermi level is found to be E-F = 250 meV, above the Dirac point. This value of EF is almost 3 times larger than that in our previous study on the Bi2Se2.1Te0.9 topological insulator; however, it still touches the tip of the bulk valence band. This explains the metallic behavior and holelike bulk charge carriers in the Sb2Te2Se compound.
引用
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页数:5
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