A new line shape analysis of Raman emission in porous silicon

被引：12

作者：

Brunetto, N

Amato, G

机构：

[1] IENGF, 10135 Torino

来源：

THIN SOLID FILMS | 1997年 / 297卷 / 1-2期

关键词：

Raman scattering; transmission electron microscopy; porous silicon; computer simulation;

D O I：

10.1016/S0040-6090(96)09363-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This method performs the line shape analysis of Raman spectra of porous silicon by assuming the crystallite sizes as obeying to a log-normal distribution, as inferred by transmission electron microscopy observations. A Monte Carlo based method is employed allowing for a satisfactory reproduction of the experimental data. (C) 1997 Elsevier Science S.A.

引用

页码：122 / 124

页数：3

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