Nondestructive analysis of current gain of InP/InGaAs heterojunction bipolar transistor structures using photoreflectance spectroscopy

被引：0

作者：

Sugiyama, H ^{[1
]}

Watanabe, N ^{[1
]}

Watanabe, K ^{[1
]}

Kobayashi, T ^{[1
]}

Wada, K ^{[1
]}

机构：

[1] NTT, Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS | 2000年 / 588卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InP/InGaAs heterojunction bipolar transistor (HBT) wafers grown by metal-organic vapor phase epitaxy (MOVPE) have been characterized by photoreflectance (PR) spectroscopy. The intensity of PR signals from the InP emitter and InGaAs collector layers of the HBT wafers decreased with increasing emitter growth temperature and showed a linear positive correlation with the HBT current gain. On the other hand, the intensity of PR signals from the n-InP single layers scarcely changed with increasing InP growth temperature. The change in the PR intensity of the emitter and collector layers is expected to reflect the crystal quality of the adjacent InGaAs:C base layer, which determines the HBT current gain. Thus, the present PR method is eminently suitable for the nondestructive analysis of the current gain of InP/InGaAs HBT wafers.

引用

页码：257 / 262

页数：6

共 14 条

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