Rates of reactions of H atoms with some CVD precursors

被引：5

作者：

Arthur, NL ^{[1
]}

Cooper, IA

Czerwinski, A

Miles, LA

机构：

[1] La Trobe Univ, Dept Chem, Melbourne, Vic 3083, Australia

[2] Zeneca Pharmaceut, Macclesfield SK10 4TG, Cheshire, England

来源：

THIN SOLID FILMS | 2000年 / 368卷 / 02期

基金：

澳大利亚研究理事会;

关键词：

H atom reactions; kinetic data; flash photolysis; chemical vapour deposition modelling;

D O I：

10.1016/S0040-6090(00)00760-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rate constants have been measured for the reactions of H atoms with SiH4, CH3SiH3, (CH3)(2)SiH2, (CH3)(3)SiH, GeH4, GeD4, CH3GeH3, (CH3)(2)GeH2, (CH3)(3)GeH, PH3 and AsH3, over a range of temperatures, in pulsed photolysis experiments in which H atoms were generated by the HE-sensitized photolysis (253.7 nm) of H-2 and monitored by Lyman-alpha (121.6 nm) absorption. Reactivity trends are identified and the relationship with the corresponding thermochemistry is discussed. (C) 2000 Elsevier Science S.A. All tights reserved.

引用

页码：176 / 180

页数：5

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