Review of solid state photomultiplier developments by CPTA and photonique SA

被引:11
作者
McNally, David [1 ]
Golovin, Victor [2 ]
机构
[1] Photonique SA, CH-1217 Meyrin, Switzerland
[2] CPTA, Moscow 111141, Russia
关键词
Solid state photomultiplier; SSPM; Silicon photomultiplier; SiPM; Multipixel photon counter; MPPC; Trench separation; PET; Radiation detector; SILICON; MICROPLASMA;
D O I
10.1016/j.nima.2009.05.140
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We report on recently developed solid state photomultipliers (SSPMs) based on the Metal Resistive Silicon Geiger-mode Avalanche Photodiode architecture (MRS-APD). SSPMs implementing a n+pp+ doping structure now reach up to 50% peak photon detection efficiency in the green and red parts of the visible spectrum. They operate at high gain (> 3 x 10(5)) and have exceptionally low temperature coefficient (< 1.0%/degrees C). Optical cross-talk between SSPM micro-cells is significantly reduced through the use of optical trenches. Building on this technology, single die photon detectors with 1.0, 4.4 and 9.0 mm(2) sensitive areas have been manufactured. Special surface treatment techniques allow for an increase of UV and blue light sensitivity for these green-red sensitive devices. We also report on SSPMs employing a p+pn+ doping structure which exhibit high sensitivity for blue and UV light with photon detection efficiency reaching up to 30% at 420 nm. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:150 / 153
页数:4
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