Influence of trapping on silicon microstrip detector design and performance

New systematic measurements of effective carrier trapping times were used as an input to simulate the operation of an irradiated silicon strip detector. The dependence of charge-collection efficiency (CCE) on bias voltage, magnetic field, irradiation particle type, fluence, and detector design was investigated. It was observed that irradiated detectors processed on standard n-silicon material with n(+) strips performed better than those with p(+) strips. At Phi(eq) = 2 x 10(14) cm(-2), the difference in CCE was around 10% at voltages well above V-FD and even larger for lower voltages. A few percent difference in CCE for different track paths across the strip was observed. The effective Lorentz angle was found to be independent of the irradiation level. A nonnegligible amount of charge also appears on neighboring strips as a consequence of charge trapping. The influence of detector thickness and strip width on induced charge was also studied.