Titanium single-electron transistor fabricated by electron-beam lithography

被引：5

作者：

Sillanpää, MA ^{[1
]}

Hakonen, PJ ^{[1
]}

机构：

[1] Helsinki Univ Technol, Low Temp Lab, FIN-02015 Espoo, Finland

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 15卷 / 01期

关键词：

single-electron transistors; Coulomb blockade; tunneling;

D O I：

10.1016/S1386-9477(01)00491-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron-beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single-electron transistor which operated at T < 0.4 K and had a moderate charge noise of 2.5 x 10(-3) e/rootHz at 10 Hz. Based on non-linearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV. The non-superconducting Ti junctions can be useful in several applications. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：41 / 47

页数：7

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