Investigations on electronic structure, magnetic and optical properties of C and Ti co-doped zincblende GaN for optoelectronic applications

被引:14
作者
Khan, M. Junaid Iqbal [1 ]
Kanwal, Zarfishan [1 ]
Latif, Abid [2 ]
Ahmad, Javed [1 ]
Akhtar, Perveen [1 ]
Yousaf, Masood [3 ]
Ullah, Hamid [4 ]
机构
[1] Bahauddin Zakariya Univ, Dept Phys, Lab Theoret & Expt Phys, Multan 60800, Pakistan
[2] Bahauddin Zakariya Univ, Fac Engn & Technol, Dept Civil Engn, Multan 60800, Pakistan
[3] Univ Educ, Dept Phys, Div Sci & Technol, Lahore 54770, Pakistan
[4] Univ Ulsan, Dept Phys, Multiscale Mat Modeling Lab, Ulsan 44610, South Korea
来源
OPTIK | 2021年 / 231卷
关键词
Gallium nitride (GaN); C and Ti doping; Co-doping; Density of states; DFT calculations; Optical properties; ELECTRICAL-PROPERTIES; CARBON; 1ST-PRINCIPLES; APPROXIMATION; TRANSISTORS; DIODES; ENERGY; FILMS; ALN; BN;
D O I
10.1016/j.ijleo.2021.166425
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In the current research, we perform a density functional theory study of C, Ti monodoped (C@GaN, Ti@GaN), and their co-doped GaN (C-Ti@GaN). We investigate the effect of C, Ti and their co-doping on the structural, electronic, magnetic, and optical properties using the Wien2K code. The formation energy of monoand co-doped GaN is negative under the N-rich conditions and co-doped material is more stable than the mono-doped material. Optical absorption of monodoped GaN is redshifted while the absorption of co-doped material is blue shifted. Our calculated results are in accordance with the already reported literature. Since, we did not find magnetism in the C-Ti@GaN material and because of blueshift in absorption spectrum; we suggest that codoped GaN is more favorable for the UV optoelectronics, power electronics, and the UV solar cells applications than the co-doped materials.
引用
收藏
页数:12
相关论文
共 72 条
[1]  
Akinlami JO., 2015, J. Nat. Sci. Eng. Technol, V14, P29
[2]   First principles study of the relative stability and the electronic properties of GaN [J].
Arbouche, O. ;
Belgoumene, B. ;
Soudini, B. ;
Driz, M. .
COMPUTATIONAL MATERIALS SCIENCE, 2009, 47 (02) :432-438
[3]  
Ayub S, 2016, PROC IEEE MICR ELECT, P379, DOI 10.1109/MEMSYS.2016.7421640
[4]   FINITE ELASTIC STRAIN OF CUBIC CRYSTALS [J].
BIRCH, F .
PHYSICAL REVIEW, 1947, 71 (11) :809-824
[5]   IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].
BLOCHL, PE ;
JEPSEN, O ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233
[6]   Doping properties of C, Si, and Ge impurities in GaN and AlN [J].
Boguslawski, P ;
Bernholc, J .
PHYSICAL REVIEW B, 1997, 56 (15) :9496-9505
[7]   Dielectric Properties, AC Conductivity, and Electric Modulus Analysis of Bulk Ethylcarbazole-Terphenyl [J].
Bouaamlat, Hussam ;
Hadi, Nasr ;
Belghiti, Najat ;
Sadki, Hayat ;
Naciri Bennani, Mohammed ;
Abdi, Farid ;
Lamcharfi, Taj-dine ;
Bouachrine, Mohammed ;
Abarkan, Mustapha .
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2020, 2020
[8]   Ultraviolet curable dry polymer films from emulsion polymers [J].
Chee, SY ;
Gan, SN .
JOURNAL OF APPLIED POLYMER SCIENCE, 2006, 100 (03) :2317-2322
[9]   The electrical activity of GaN doped with transition metal impurities [J].
Chisholm, JA ;
Bristowe, PD .
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2001, 9 (04) :249-258
[10]   CALCULATION OF BULK MODULI OF DIAMOND AND ZINCBLENDE SOLIDS [J].
COHEN, ML .
PHYSICAL REVIEW B, 1985, 32 (12) :7988-7991