Toward High-Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal-Assisted Termination

被引：40

作者：

Ohmagari, Shinya ^{[1
]}

Yamada, Hideaki ^{[1
]}

Tsubouchi, Nobuteru ^{[1
]}

Umezawa, Hitoshi ^{[1
]}

Chayahara, Akiyoshi ^{[1
]}

Mokuno, Yoshiaki ^{[1
]}

Takeuchi, Daisuke ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Diamond Mat Team, 1-8-31 Midorigaoka, Ikeda, Osaka 5638577, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 21期

基金：

日本学术振兴会;

关键词：

chemical vapor deposition; diamond; dislocations; heteroepitaxial substrates; Schottky; two-photon-excited photoluminescence; wafers; SINGLE-CRYSTAL DIAMOND; RATE HOMOEPITAXIAL GROWTH; EXCITONIC RECOMBINATION RADIATION; SCHOTTKY-BARRIER DIODES; MICROWAVE PLASMA CVD; THREADING DISLOCATIONS; RAMAN-SPECTROSCOPY; LEAKAGE CURRENT; HIGH-PURITY; QUALITY;

D O I：

10.1002/pssa.201900498

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A major obstacle limiting diamond electronics is dislocations, which deteriorate device properties. As threading dislocations (TDs) are normally inherited from the substrate to the epitaxial layer, control and annihilation of their propagation are important. Herein, metal-assisted termination (MAT), in which the propagation of dislocations is suppressed by in situ metal doping, is proposed. Heavy W doping is realized by a hot-filament (HF) chemical vapor deposition (CVD) using heated wires at a high temperature of >2400-K. A large reduction of TD density is confirmed by cathodoluminescence studies and etch-pit analysis. The impact of dislocation reduction is investigated electrically. After insertion of the MAT buffer layer, Schottky barrier diodes (SBDs) show improved rectifying action and highly uniform characteristics even when substrates with high dislocation densities (mosaic and heteroepitaxial wafers) are used. The 3D structure of dislocation propagation is successfully captured by two-photon-excited photoluminescence (2PPL) imaging of Band-A luminescence. The 2PPL Band-A luminescence (without band-edge excitation) shows high spatial resolution in the depth direction. An abrupt decrease in TD density is captured for heteroepitaxial substrates with an inserted MAT buffer layer. The MAT technique provides an effective approach to realize high-performance diamond electronics.

引用

页数：15

共 82 条

[1] Improvement of dislocation density in thick CVD single crystal diamond films by coupling H2/O2 plasma etching and chemo-mechanical or ICP treatment of HPHT substrates [J].