Gate-Controlled Sum-Frequency Vibrational Spectroscopy for Probing Charged Oxide/Water Interfaces

被引：25

作者：

Wang, Hongqing ^{[1
,2
]}

Xu, Qian ^{[1
,2
]}

Liu, Zhihua ^{[1
,2
]}

Tang, Yiming ^{[1
,2
]}

Wei, Guanghong ^{[1
,2
]}

Shen, Y. Ron ^{[1
,3
]}

Liu, Wei-Tao ^{[1
,2
]}

机构：

[1] Fudan Univ, Phys Dept, State Key Lab Surface Phys, Minist Educ,Key Lab Micro & Nano Photon Struct, Shanghai 200433, Peoples R China

[2] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2019年 / 10卷 / 19期

基金：

中国国家自然科学基金;

关键词：

WATER-MOLECULES; SURFACES; GENERATION; SILICON;

D O I：

10.1021/acs.jpclett.9b01908

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The rich chemistry of oxide/aqueous interfaces originates from the interfacial layer formed by surface charges and adjoining water molecules. Yet not much is clear about such layers, because they are difficult to access, and measurements unavoidably collect signals from the diffuse layer nearby, which is perturbed by the surface potential extending into the bulk water. Here we show that gating of a semiconductor/oxide/water junction can effectively vary the surface charge density at the oxide/water interface but keep the surface potential low and barely varying, allowing effective removal of the diffuse layer contribution. With sum-frequency vibrational spectroscopy on a silicon/silica/deionized-water model junction, the variation of the bonded layer water structure in response to surface charging can be readily detected. This new scheme is generally applicable to all oxide/water interfaces, providing opportunities for future investigations at a deeper molecular level.

引用

页码：5943 / 5948

页数：7

共 35 条

[1] Interfacial Structure of Room-Temperature Ionic Liquids at the Solid-Liquid Interface as Probed by Sum Frequency Generation Spectroscopy [J].