Dark Current Analysis in Type-II InAs/GaSb Superlattice LWIR Detector with M-structure Barrier

被引：0

作者：

Shen, Dongpei ^{[1
,2
]}

Sun, Tong ^{[1
]}

Zhu, Pengfei ^{[1
]}

Guan, Xiaoning ^{[1
]}

Jia, Baonan ^{[1
]}

Song, Haizhi ^{[3
,4
]}

Lu, Pengfei ^{[1
,2
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100876, Peoples R China

[3] Southwest Inst Tech Phys, Chengdu 610041, Peoples R China

[4] Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China

来源：

2022 IEEE 7TH OPTOELECTRONICS GLOBAL CONFERENCE, OGC | 2022年

关键词：

LWIR; T2SL; M structure; dark current;

D O I：

10.1109/OGC55558.2022.10051059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We designed a long-wave infrared detector using InAs/GaSb and InAs/GaSb/AlSb/GaSb superlattices and further studied the effect of some sensitive parameters on dark current characteristics. We utilize the numerical model to analyze the dark current characteristics of the contact layer and the absorption layer at different doping levels, and also calculate the dark current characteristics of the absorption layer and barrier layer at different thicknesses. By designing different absorption layer and barrier layer, we found that the detector has a hole barrier in the valence band, which effectively reducing the dark current level. Under the optimal detector structure, the dark current at low temperature is maintained at a relatively ideal level about 2.25x10(-5) A/cm(2) and the quantum efficiency is close to 42%.

引用

页码：70 / 74

页数：5

共 20 条

[1] SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].