Structural, optical and electrical properties of chemically deposited nonstoichiometric copper indium diselenide films

被引：21
作者：
Bari, R. H.
Patil, L. A. [1 ]
Patil, P. P.
机构：
[1] Pratap Coll, PG Dept Phys, Amalner 425401, India
[2] N Maharashtra Univ, Dept Phys Sci, Jalgaon 425001, India
来源：
BULLETIN OF MATERIALS SCIENCE | 2006年 / 29卷 / 05期
关键词：
copper indium diselenide; thin films; chemical bath deposition; non-stoichiometry;
D O I：
10.1007/BF02914085
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at temperature, 60 degrees C. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out and discussed. Characterization included X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force n-dcroscopy (AFM), energy dispersive X-ray analysis (EDAX) and absorption spectroscopy. The results are discussed and interpreted.
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页码：529 / 534
页数：6
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