Scanning tunneling spectroscopy of dangling-bond wires fabricated on the Si(100)-2x1-H surface

被引：38

作者：

Hitosugi, T ^{[1
]}

Hashizume, T ^{[1
]}

Heike, S ^{[1
]}

Watanabe, S ^{[1
]}

Wada, Y ^{[1
]}

Hasegawa, T ^{[1
]}

Kitazawa, K ^{[1
]}

机构：

[1] HITACHI LTD,ADV RES LAB,HATOYAMA,SAITAMA 35003,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 3B期

关键词：

STM; STS; silicon; surface; manipulation; dangling bond; atomic wire;

D O I：

10.1143/JJAP.36.L361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunneling spectroscopy of atomic-scale dangling-bond wires on a hydrogen-terminated Si(100)-2x1-H surface is studied using ultrahigh-vacuum scanning tunneling microscopy. Individual dangling bonds are fabricated by extracting hydrogen atoms one by one from the hydrogen terminated surface to form atomic-scale dangling-bond wires. These wires show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results are compared with first-principles theoretical calculations.

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收藏

页码：L361 / L364

页数：4

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