Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides

被引：81

作者：

Feng, Ning-Ning ^{[1
]}

Dong, Po ^{[1
]}

Zheng, Dawei ^{[1
]}

Liao, Shirong ^{[1
]}

Liang, Hong ^{[1
]}

Shafiiha, Roshanak ^{[1
]}

Feng, Dazeng ^{[1
]}

Li, Guoliang ^{[2
]}

Cunningham, John E. ^{[2
]}

Krishnamoorthy, Ashok V. ^{[2
]}

Asghari, Mehdi ^{[1
]}

机构：

[1] Kotura Inc, Monterey Pk, CA 91754 USA

[2] Sun Microsyst Inc, San Diego, CA 92121 USA

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 01期

关键词：

SILICON;

D O I：

10.1364/OE.18.000096

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a vertical p-i-n thin-film germanium photodetector integrated on 3 mu m thick large core silicon-on-insulator (SOI) waveguides. The device demonstrates very high external responsivity due to the low fiber coupling loss to the large core waveguides. The germanium width and thickness are carefully designed to achieve high responsivity yet retain highspeed performance. Even with fiber coupling loss included, the device has demonstrated greater than 0.7A/W external responsivity at 1550nm for TM polarization and 0.5A/W for TE polarization. A low dark current of 0.2 mu A at -0.5V bias is reported. 3dB bandwidths of 12GHz and 8.3GHz at -2.5V bias are also reported for 100 mu m and 200 mu m long devices, respectively. The device can cover the communication wavelength spectrum up to 1620nm with a relatively flat responsivity of >0.5A/W. Further studies suggest that with a modified design the device is capable of achieving 1A/W external responsivity for both TE and TM polarizations and greater than 30GHz bandwidth. (C) 2009 Optical Society of America

引用

页码：96 / 101

页数：6

共 11 条

[1] High performance, waveguide integrated Ge photodetectors [J].