Cubic boron nitride based metastable coatings and nanocomposites

被引:22
作者
Ulrich, Sven [1 ]
Ye, Jian [1 ]
Stueber, Michael [1 ]
Ziebert, Carlos [1 ]
机构
[1] Forschungszentrum Karlsruhe, Inst Mat Forsch 1, D-76344 Eggenstein Leopoldshafen, Germany
关键词
Magnetron sputtering; Cubic boron nitride; Superhard materials; C-BN FILMS; CHEMICAL-VAPOR-DEPOSITION; INDUCED STRESS-RELAXATION; THICK CBN FILMS; HIGH-QUALITY; MECHANICAL-PROPERTIES; HOLLOW-CATHODE; ION ENERGY; GROWTH; TEMPERATURE;
D O I
10.1016/j.tsf.2009.09.109
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Various PVD and plasma-assisted CVD methods presently used for the deposition of cubic boron nitride (c-BN) thin films demand adequate conditions relating to ion bombardment of growing films, growth temperature, film stoichiometry, etc. The deposition conditions, often appearing rather apparatus-dependent, can be well categorized according to the fundamental parameters of bombarding ions as well as condensing neutral particles, including their energy and flux ratio, and a few of others like ion mass and incident angle. According to these parameters, various surface kinetic processes and their consequences are discussed particularly in connection with the resulting film phases and stress. Typical c-BN films are known for their extremely high compressive stress and poor adhesion as a result of intensive ion bombardment during deposition. Individual measures attempting to relieve this detrimental stress are briefly summarized. The present paper focuses on magnetron-sputtered, c-BN-based metastable films and nanocomposite films with considerably reduced internal stress in comparison to the usual "pure" c-BN films. Two examples will be shown, namely c-BN/a-C nanocomposite and c-BN:O metastable films. including their deposition details, structure and composition characterization, and mechanical properties. Also illustrated is a growth scheme tailored for the deposition of thick, adhered, cubic-phase dominated, superhard c-BN:O films above 2 mu m on silicon substrates. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1443 / 1450
页数:8
相关论文
共 90 条
  • [31] Preparation of cubic boron nitride thin film by the helicon wave plasma enhanced chemical vapor deposition
    Kim, SH
    Kim, IH
    Kim, KS
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (26) : 4023 - 4025
  • [32] Effects of titanium and aluminum incorporations on the structure of boron nitride thin films
    Kolitsch, A
    Wang, X
    Manova, D
    Fukarek, W
    Möller, W
    Oswald, S
    [J]. DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) : 386 - 390
  • [33] Stress reduction in boron carbonitride films by ion energy-modulated multilayers
    Kratzsch, A
    Ulrich, S
    Leiste, H
    Stüber, M
    Holleck, H
    [J]. SURFACE & COATINGS TECHNOLOGY, 1999, 116 : 253 - 260
  • [34] Deposition of cubic boron nitride with an inductively coupled plasma
    Kuhr, M.
    Reinke, S.
    Kulisch, W.
    [J]. SURFACE & COATINGS TECHNOLOGY, 1995, 74-75 (1-3) : 806 - 812
  • [35] Parameter spaces for the nucleation and the subsequent growth of cubic boron nitride films
    Kulisch, W
    Ulrich, S
    [J]. THIN SOLID FILMS, 2003, 423 (02) : 183 - 195
  • [36] Kulisch W, 1997, DIAMOND FILM TECHNOL, V7, P105
  • [37] A concept for the deposition of adherent cubic boron nitride films
    Kulisch, W
    Freudenstein, R
    Klett, A
    Plass, MF
    [J]. THIN SOLID FILMS, 2000, 377 : 170 - 176
  • [38] Deposition of thick cubic boron nitride films - Mechanisms and concepts
    Kulisch, Wilhelm
    Freudenstein, Regine
    [J]. THIN SOLID FILMS, 2007, 516 (2-4) : 216 - 222
  • [39] Improvement of the adhesion of cubic boron nitride films by adding miscellaneous elements
    Kurooka, S
    Ikeda, T
    Tanaka, A
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 : 1088 - 1091
  • [40] Synthesis and properties of BN:C films deposited by a dual-ion beam sputtering method
    Kurooka, S
    Ikeda, T
    Suzuki, M
    Tanaka, A
    [J]. DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 1122 - 1126