Binding energies of hydrogen on Si(111) and Si(100).

被引：0

作者：

Raschke, MB ^{[1
]}

Höfer, U ^{[1
]}

机构：

[1] Max Planck Inst Quantenopt, D-85740 Garching, Germany

来源：

ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 2000年 / 219卷

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

337-COLL

引用

页码：U564 / U564

页数：1

共 50 条

[1] DYNAMICS OF HYDROGEN INTERACTIONS WITH SI(100) AND SI(111) SURFACES
KOLASINSKI, KW
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1995, 9 (21): : 2753 - 2809
[2] BINDING-ENERGIES OF H AND CL ON SI(111)
RAVI, R
TAKOUDIS, CG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (01) : 195 - 200
[3] ROLE OF BOND STRAIN IN THE CHEMISTRY OF HYDROGEN ON SI(111) AND SI(100) SURFACES
BOLAND, JJ
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1991, 202 : 187 - PHYS
[4] Oxidation kinetics of hydrogen-enriched Si(100) and Si(111) surfaces
Alexandrova, S
Szekeres, A
THIN SOLID FILMS, 1999, 343 : 389 - 392
[5] HYDROGEN INTERACTIONS WITH SI(111) AND SI(100) SURFACES STUDIED BY ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY
FUJIWARA, K
PHYSICAL REVIEW B, 1982, 26 (04): : 2036 - 2040
[6] GROWTH OF CU FILMS ON HYDROGEN-TERMINATED SI(100) AND SI(111) SURFACES
DEMCZYK, BG
NAIK, R
AUNER, G
KOTA, C
RAO, U
JOURNAL OF APPLIED PHYSICS, 1994, 75 (04) : 1956 - 1961
[7] CHLORINATION AND PHOTODESORPTION ON SI(100) AND SI(111)
PAULSENBOAZ, CM
RHODIN, TN
LANG, CC
APPLIED SURFACE SCIENCE, 1994, 79-80 (1-4) : 72 - 78
[8] Influence of strain on binding energies of Si atoms at Ge(111) surfaces
Filimonov, SN
Voigtländer, B
SURFACE SCIENCE, 2002, 512 (1-2) : L335 - L340
[9] SI BINDING AND NUCLEATION ON SI(100)
BEDROSSIAN, PJ
PHYSICAL REVIEW LETTERS, 1995, 74 (18) : 3648 - 3651
[10] TRIETHYLGALLIUM ADSORPTION ON SI(100) AND SI(111) SURFACES
HIRAYAMA, H
SASAOKA, C
TATSUMI, T
OHSHITA, Y
APPLIED PHYSICS LETTERS, 1989, 54 (02) : 126 - 128

← 1 2 3 4 5 →