Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment

被引：114

作者：

Hiyoshi, Toru ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 09期

基金：

日本学术振兴会;

关键词：

ENERGY-ELECTRON IRRADIATION; CHEMICAL-VAPOR-DEPOSITION; TRANSIENT SPECTROSCOPY; DEFECTS; EPILAYERS; SILICON; GENERATION; OXIDATION; LIFETIME; GROWTH;

D O I：

10.1143/APEX.2.091101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By thermal oxidation of 4H-SiC at 1150-1300 degrees C, the Z(1/2) and EH6/7 concentrations can be reduced to below 1 x 10(11) cm(-3). By the oxidation, however, a high concentration of HK0 center (E-V + 0.78 eV) is generated. Additional annealing in Ar at 1550 degrees C results in elimination of the HK0 center. Thus, all the major deep levels can be eliminated by the two-step thermal treatment. Based on the depth profiles of deep levels, a model for the defect generation and elimination is proposed. The carrier lifetime in 4H-SiC epilayers has been improved from 0.64 (as-grown) to 4.52 mu s by this method. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

共 32 条

[1]

Bergman JP, 1997, PHYS STATUS SOLIDI A, V162, P65, DOI 10.1002/1521-396X(199707)162:1<65::AID-PSSA65>3.0.CO

[2]

2-2

[3] Ab initio study of the migration of intrinsic defects in 3C-SiC -: art. no. 205201 [J].

Bockstedte, M ;

Mattausch, A ;

Pankratov, O .

PHYSICAL REVIEW B, 2003, 68 (20)

[4] Status and prospects for SiC power MOSFETs [J].

Cooper, JA ;

Melloch, MR ;

Singh, R ;

Agarwal, A ;

Palmour, JW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) :658-664

[5]

Dalibor T, 1997, PHYS STATUS SOLIDI A, V162, P199, DOI 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO

[6]

2-0

[7] High-temperature deep level transient spectroscopy on As-grown P-type 4H-SiC epilayers [J].

Danno, K ;

Kimoto, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L285-L287

[8] Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation [J].

Danno, Katsunori ;

Nakamura, Daisuke ;

Kimoto, Tsunenobu .

APPLIED PHYSICS LETTERS, 2007, 90 (20)

[9] Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons [J].

Danno, Katsunori ;

Kimoto, Tsunenobu .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)

[10] Deep level transient spectroscopy on as-grown and electron-irradiated p-type 4H-SiC epilayers [J].

Danno, Katsunori ;

Kimoto, Tsunenobu .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (10)

← 1 2 3 4 →