Watt-Level 21-25-GHz Integrated Doherty Power Amplifier in GaAs Technology

被引：22
|
作者：
Ramella, Chiara [1 ]
Camarchia, Vittorio [1 ]
Piacibello, Anna [1 ,2 ]
Pirola, Marco [1 ]
Quaglia, Roberto [3 ]
机构：
[1] Politecn Torino, Dept Elect & Telecommun, I-10129 Turin, Italy
[2] Microwave Engn Ctr Space Applicat MECSA, I-00133 Rome, Italy
[3] Cardiff Univ, Ctr High Frequency Engn, Cardiff CF24 3AA, Wales
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2021年 / 31卷 / 05期
关键词：
Bandwidth; Power generation; Gallium arsenide; Gain; Wireless communication; Optimized production technology; Microwave communication; Doherty power amplifiers (DPAs); GaAs; K-band; microwave monolithic integrated circuit (MMIC); microwave radios; BAND;
D O I：
10.1109/LMWC.2021.3069555
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on the GaAs 150-nm pseudomorphic HEMT (pHEMT) technology of Qorvo. For the output power combiner, a wideband design approach, based on embedding the output capacitance of the active devices in the combiner, is applied. A state-of-the-art bandwidth of 4 GHz is achieved: in the 21-25-GHz range, the output power is above 29.5 dBm, with an associated power added efficiency (PAE) higher than 30%. At 6-dB output back-off, the PAE is above 19% while the corresponding gain is higher than 10 dB.
引用
收藏
页码：505 / 508
页数：4
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