Watt-Level 21-25-GHz Integrated Doherty Power Amplifier in GaAs Technology

被引：22

作者：

Ramella, Chiara ^{[1
]}

Camarchia, Vittorio ^{[1
]}

Piacibello, Anna ^{[1
,2
]}

Pirola, Marco ^{[1
]}

Quaglia, Roberto ^{[3
]}

机构：

[1] Politecn Torino, Dept Elect & Telecommun, I-10129 Turin, Italy

[2] Microwave Engn Ctr Space Applicat MECSA, I-00133 Rome, Italy

[3] Cardiff Univ, Ctr High Frequency Engn, Cardiff CF24 3AA, Wales

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2021年 / 31卷 / 05期

关键词：

Bandwidth; Power generation; Gallium arsenide; Gain; Wireless communication; Optimized production technology; Microwave communication; Doherty power amplifiers (DPAs); GaAs; K-band; microwave monolithic integrated circuit (MMIC); microwave radios; BAND;

D O I：

10.1109/LMWC.2021.3069555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the design and characterization of a Doherty power amplifier for K-band applications based on the GaAs 150-nm pseudomorphic HEMT (pHEMT) technology of Qorvo. For the output power combiner, a wideband design approach, based on embedding the output capacitance of the active devices in the combiner, is applied. A state-of-the-art bandwidth of 4 GHz is achieved: in the 21-25-GHz range, the output power is above 29.5 dBm, with an associated power added efficiency (PAE) higher than 30%. At 6-dB output back-off, the PAE is above 19% while the corresponding gain is higher than 10 dB.

引用

页码：505 / 508

页数：4

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