Low-temperature (∼270 °C) growth of vertically aligned ZnO nanorods using photoinduced metal organic vapour phase epitaxy

被引：6
作者：
Yatsui, T. [1 ]
Lim, J.
Nakamata, T.
Kitamura, K.
Ohtsu, M.
Yi, G-C
机构：
[1] Japan Sci & Technol Agcy, SORST, Tokyo 1940004, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch & Engn, Kanagawa 2268502, Japan
[3] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
[4] Pohang Univ Sci & Technol, POSTECH, Natl CRI Ctr Semicond Nanorods, Pohang 790784, Gyeongbuk, South Korea
[5] Pohang Univ Sci & Technol, POSTECH, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea
来源：
NANOTECHNOLOGY | 2007年 / 18卷 / 06期
关键词：
D O I：
10.1088/0957-4484/18/6/065606
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We successfully produced a drastic decrease in the required growth temperature of single-crystalline ZnO nanorods, and enabled successful growth of vertically aligned ZnO nanorods on a Si(100) substrate using photoinduced metal organic vapour phase epitaxy (MOVPE). We introduced 325 nm light during the MOVPE growth, and achieved vertical growth of single-crystalline ZnO nanorods with a hexagonal crystal structure on Si(100) at a growth temperature of 270 degrees C. The successful low-temperature growth of ZnO nanorods on the Si(100) substrate described here is a promising step toward designing nanoscale photonic and electronic devices required by future systems.
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页数：4
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