The research on growth temperature of Ge/Si thin films grown by magnetron sputtering

被引：0
|
作者：
Mao, Xu [1 ]
Jin, Yingxia
Zhou, Zhenlai
Yang, Yu
Wu, Xinghui
Zhang, Fuxue
机构：
[1] Beijing Informat Technol Inst, Res Ctr Sensor Technol, Beijing 100101, Peoples R China
[2] Yunnan Univ, Dept Mat Sci & Engn, Kunming 650091, Peoples R China
来源：
RARE METAL MATERIALS AND ENGINEERING | 2006年 / 35卷
关键词：
Ge/Si thin film; Raman scattering; growth temperature;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The films of Ge and Si were grown on the substrate Si (100) by magnetron sputtering at 2.5 Pa Ar pressure. The growth temperature of films was 100 degrees C, 250 degrees C, 400 degrees C and 550 degrees C. The structure and composition were analysised by Raman scattering. The poly-crystal peak and crystal peak of Ge were observed in these films. The results indicate that the single crystal film of Ge was prepared at the substrate temperature of 400 degrees C. The peak of acoustic phonons of Ge was 98 cm(-1) and that of Si was 170 cm(-1).
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收藏
页码：564 / 566
页数：3
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