Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

被引：19

作者：

Washiyama, Shun ^{[1
]}

Mirrielees, Kelsey J. ^{[1
]}

Bagheri, Pegah ^{[1
]}

Baker, Jonathon N. ^{[1
]}

Kim, Ji-Hyun ^{[1
]}

Guo, Qiang ^{[1
]}

Kirste, Ronny ^{[2
]}

Guan, Yan ^{[1
]}

Breckenridge, M. Hayden ^{[1
]}

Klump, Andrew J. ^{[1
]}

Reddy, Pramod ^{[2
]}

Mita, Seiji ^{[2
]}

Irving, Douglas L. ^{[1
]}

Collazo, Ramon ^{[1
]}

Sitar, Zlatko ^{[1
,2
]}

机构：

[1] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Adroit Mat Inc, 2054 Kildaire Farm Rd, Cary, NC 27518 USA

来源：

APPLIED PHYSICS LETTERS | 2021年 / 118卷 / 04期

关键词：

Aluminum gallium nitride;

D O I：

10.1063/5.0035957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-compensation in Ge- and Si-doped Al0.3Ga0.7N has been investigated in terms of the formation of III vacancy and donor-vacancy complexes. Both Ge- and Si-doped AlGaN layers showed a compensation knee behavior with impurity compensation (low doping regime), compensation plateau (medium doping regime), and self-compensation (high doping regime). A maximum free carrier concentration of 4-5x10(19)cm(-3) was obtained by Ge doping, whereas Si doping resulted in only half of that value, similar to 2x10(19)cm(-3). A DFT calculation with the grand canonical thermodynamics model was developed to support the hypothesis that the difference in self-compensation arises from the difference in the formation energies of the V-III-n center dot donor complexes relative to their onsite configurations. The model suggested that the V-III-2 center dot donor and V-III-3 center dot donor complexes were responsible for self-compensation for both Ge- and Si-doped AlGaN. However, a lower free carrier concentration in Si-doped samples was due to a high V-III-3 center dot Si concentration, resulting from a lower energy of formation of V-III-3 center dot Si.

引用

页数：6