Vertical AlGaN deep ultraviolet light emitting diode emitting at 322 nm fabricated by the laser lift-off technique

被引：49
作者：
Kawasaki, Koji
Koike, Choshiro
Aoyagi, Yoshinobu
Takeuchi, Misaichi
机构：
[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] RIKEN, Nanosci Res Program, Wako, Saitama 3510198, Japan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 26期
基金：
日本学术振兴会;
关键词：
D O I：
10.1063/1.2424668
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A vertical AlGaN deep ultraviolet (DUV) light emitting diode (LED) emitting at 322 nm was fabfricated by the laser lift-off technique. The emission area extended to the entire electrode uniformly, and the current crowding was suppressed effectively in the devices. As a result, the differential conductance of the vertical LED was improved by a factor of 5 and the operation voltage was reduced to half, compared to that of the lateral LED. The self-heating effect was effectively suppressed even at high-current-density operation. The vertical structure in the high resistive AlGaN LED has potential application in high-power AlGaN DUV devices. (c) 2006 American Institute of Physics.
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页数：3
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