Energy dependence of damage to Si PIN diodes exposed to beta radiation

被引：8

作者：

Lauber, JA ^{[1
]}

GasconShotkin, S ^{[1
]}

Kellogg, RG ^{[1
]}

Martinez, GR ^{[1
]}

机构：

[1] UNIV MARYLAND, DEPT PHYS, COLLEGE PK, MD 20742 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 396卷 / 1-2期

关键词：

D O I：

10.1016/S0168-9002(97)00742-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The radiation damage to Si PIN diodes such as used in the OPAL SiW luminometer was studied. It was found that the increase in leakage current after exposure to bursts of 500 MeV electrons is >0.2 x 10(3) times higher than after the exposure of an equivalent dose of electrons emitted from a Strontium beta source. Highly-energetic electrons produce a similar amount of damage to silicon as do protons or neutrons.

引用

页码：165 / 171

页数：7

共 6 条

[1]

ANDERSON BE, 1994, IEEE T NUCL SCI, V41

[2] MEASUREMENTS OF DEGRADATION OF SILICON DETECTORS AND ELECTRONICS IN VARIOUS RADIATION ENVIRONMENTS [J].

BEUVILLE, E ;

CENCI, P ;

FEDERSPIEL, A ;

GOSSLING, C ;

HEIJNE, EHM ;

JARRON, P ;

KRANER, HW ;

MASSAM, T ;

MUNDAY, D ;

PAL, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1990, 288 (01) :68-75

[3]

BROWN LS, 1994, PHYS REV D, V50

[4] RADIATION HARDNESS OF SILICON DETECTORS FOR FUTURE COLLIDERS [J].

FRETWURST, E ;

CLAUSSEN, N ;

CROITORU, N ;

LINDSTROM, G ;

PAPENDICK, B ;

PEIN, U ;

SCHATZ, H ;

SCHULZ, T ;

WUNSTORF, R .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 326 (1-2) :357-364

[5]

HALL G, 1990, P LARGE HADRON COLLI, V3, P693

[6]

Lindstrom G., 1990, 90109 DESY

← 1 →