Metallization of sub-30 nm interconnects: comparison of different liner/seed combinations

被引：14

作者：

Carbonell, Laureen ^{[1
]}

Volders, Henny ^{[1
]}

Heylen, Nancy ^{[1
]}

Kellens, Kristof ^{[1
]}

Caluwaerts, Rudy ^{[1
]}

Devriendt, Katia ^{[1
]}

Sanchez, Efrain Altamirano ^{[1
]}

Wouters, Johan ^{[1
]}

Gravey, Virginie ^{[2
]}

Shah, Kavita ^{[3
]}

Luo, Qian ^{[3
]}

Sundarrajan, Arvind ^{[3
]}

Lu, Jiang ^{[3
]}

Aubuchon, Joseph ^{[3
]}

Ma, Paul ^{[3
]}

Narasimhan, Murali ^{[3
]}

Cockburn, Andrew ^{[2
]}

Tokei, Zsolt ^{[1
]}

Beyer, Gerald P. ^{[1
]}

机构：

[1] IMEC VZW, Kapeldreef 75, B-3000 Louvain, Belgium

[2] Appl Mat Belgium, B-3000 Louvain, Belgium

[3] Appl Mat Inc, Santa Clara, CA USA

来源：

PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2009年

关键词：

D O I：

10.1109/IITC.2009.5090387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used to evaluate the scalability of TaN/Ta, RuTa, TaN + Co and MnOx metallization schemes. So far, the RuTa metallization scheme has proved to be the most promising candidate to achieve a successful metallization of 25 nm interconnects, providing high electrical yields and a good compatibility with the slurries used during CMP.

引用

页码：200 / +

页数：2