Latent damage in CMOS devices from single-event latchup

被引：44
作者：
Becker, HN [1 ]
Miyahira, TF [1 ]
Johnston, AH [1 ]
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 06期
关键词：
analog-digital conversion; CMOS integrated circuits; digital signal processors; electromigration; latent damage; oscillators; reliability; single-event latchup;
D O I：
10.1109/TNS.2002.805332
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Evaluation of several types of CMOS devices after nondestructive latchup revealed structural changes in interconnects that appears to be due to localized ejection of part of the metallization due to melting. This is a potential reliability hazard for CMOS devices because it creates localized voids within interconnects that reduce the cross section by one to two orders of magnitude in the damaged region. These effects must be considered when testing devices for damage from latchup, as well as in establishing limits for current detection and shutdown as a means of latchup protection.
引用
收藏
页码：3009 / 3015
页数：7
相关论文
共 17 条
[1]   High-current failure model for VLSI interconnects under short-pulse stress conditions [J].
Banerjee, K ;
Amerasekera, A ;
Cheung, N ;
Hu, CM .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) :405-407
[2]  
Banerjee K, 1996, 1996 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 34TH ANNUAL, P237, DOI 10.1109/RELPHY.1996.492126
[3]   THERMAL SIMULATION OF ENERGETIC TRANSIENTS IN MULTILEVEL METALLIZATION SYSTEMS [J].
GUI, X ;
DEW, SK ;
BRETT, MJ .
ELECTRONICS LETTERS, 1995, 31 (22) :1954-1956
[4]  
HADJAS W, 1998, P IEEE RAD EFF DAT W, P92
[5]   The influence of VLSI technology evolution on radiation-induced latchup in space systems [J].
Johnston, AH .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) :505-521
[6]   DYNAMIC FRACTURE TEST OF METAL THIN-FILMS DEPOSITED ON AN INSULATING SUBSTRATE BY A HIGH-CURRENT PULSE METHOD [J].
KIM, KY ;
SACHSE, W .
THIN SOLID FILMS, 1991, 205 (02) :176-181
[7]   Radiation testing results of cots based space microcircuits [J].
Layton, P ;
Anthony, H ;
Boss, R ;
Hsu, P .
1998 IEEE RADIATION EFFECTS DATA WORKSHOP, 1998, :170-176
[8]   Radiation testing results of cots based space microcircuits [J].
Layton, P ;
Strobel, D ;
Anthony, H ;
Boss, R ;
Marshall, J ;
Parkinson, J ;
Spratt, J ;
Passenheim, B .
1997 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD, 1997, :22-27
[9]  
Lum GK, 1997, IEEE T NUCL SCI, V44, P2026, DOI 10.1109/23.658985
[10]   Catastrophic latchup in CMOS analog-to-digital converters [J].
Miyahira, TF ;
Johnston, AH ;
Becker, HN ;
LaLumondiere, SD ;
Moss, SC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) :1833-1840
12