Subsurface damage from helium ions as a function of dose, beam energy, and dose rate

被引：176

作者：

Livengood, Richard ^{[1
]}

Tan, Shida ^{[1
]}

Greenzweig, Yuval ^{[1
]}

Notte, John ^{[2
]}

McVey, Shawn ^{[2
]}

机构：

[1] Intel Corp, Santa Clara, CA 95054 USA

[2] Carl Zeiss SMT, Peabody, MA 01960 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 06期

关键词：

ion beam effects; ion microscopy; ion-surface impact; MICROSCOPE;

D O I：

10.1116/1.3237101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In recent years, helium ion microscopy has produced high resolution images with novel contrast mechanisms. However, when using any charged particle beam, one must consider the potential for sample damage. In this article, the authors will consider helium ion induced damage thresholds as compared to other more traditional charged-particle-beam technologies, as a function of dose, dose rate, and beam energy, and describe potential applications operating regimes.

引用

页码：3244 / 3249

页数：6

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