Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition

2D layered materials such as graphene and transition-metal dichalcogenides (TMDCs) have emerged as promising candidates for next-generation nanoelectronic applications due to their atomically thin thicknesses and unique electronic properties. Among TMDCs, molybdenum disulfide (MoS2) has been extensively investigated as a channel material for field-effect transistor (FET) and circuit realization. However, to date most reported works have been limited to exfoliated MoS2 nanosheets primarily due to the difficulty in synthesizing large-area and high-quality MoS2 thin film. A demonstration of wafer-scale monolayer MoS2 synthesis is reported by chemical vapor deposition (CVD), enabling transistors, memristive memories, and integrated circuits to be realized simultaneously. Specifically, building on top-gated FETs with a high-kappa gate dielectric (HfO2), Boolean logic circuits including inverters and NAND gates are successfully demonstrated using direct-coupled FET logic technology, with typical inverters exhibiting a high voltage gain of 16, a large total noise margin of 0.72 V-DD at V-DD = 3 V, and perfect logic-level matching. Additionally, resistive switching is demonstrated in a MoS2-based memristor, indicating that they have great potential for the development of resistive random-access memory. By virtue of scalable CVD growth capability, the way toward practical and large-scale electronic applications of MoS2 is indicated.