On the Sn loss from thin films of the material system Cu-Zn-Sn-S in high vacuum

被引：314

作者：

Weber, A. ^{[1
]}

Mainz, R. ^{[1
]}

Schock, H. W. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 01期

关键词：

annealing; copper compounds; semiconductor materials; semiconductor thin films; tin compounds; vacuum deposition; X-ray diffraction; X-ray fluorescence analysis; zinc compounds; SOLAR-CELLS; NEUTRON-DIFFRACTION; ABUNDANT MATERIALS; CRYSTAL-STRUCTURE; EVAPORATION; TIN; CHALCOGENIDES; VAPORIZATION; SUBLIMATION; COPPER;

D O I：

10.1063/1.3273495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper the Sn loss from thin films of the material system Cu-Zn-Sn-S and the subsystems Cu-Sn-S and Sn-S in high vacuum is investigated. A combination of in situ x-ray diffractometry and x-ray fluorescence (XRF) at a synchrotron light source allowed identifying phases, which tend to decompose and evaporate a Sn-containing compound. On the basis of the XRF results a quantification of the Sn loss from the films during annealing experiments is presented. It can be shown that the evaporation rate from the different phases decreases according to the order SnS -> Cu(2)SnS(3)-> Cu(4)SnS(4)-> Cu(2)ZnSnS(4). The phase SnS is assigned as the evaporating compound. The influence of an additional inert gas component on the Sn loss and on the formation of Cu(2)ZnSnS(4) thin films is discussed.

引用

页数：6

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