Ce-doped;
TiO2;
nanorods;
Down-conversion;
Perovskite solar cells;
UV photostability;
HOLE-CONDUCTOR-FREE;
ELECTRON-TRANSPORT LAYERS;
FACILE SYNTHESIS;
EFFICIENCY;
STABILITY;
CONTACT;
D O I:
10.1016/j.ijhydene.2020.11.074
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Ce-doped TiO2 nanorod arrays as the mesoporous supporting layer and TiO2 compacted electron blocking layer was simultaneously fabricated by one-pot hydrothermal method. Ce-doped TiO2 nanorod was utilized as down-conversion luminescence centers and commercial available carbon was used in hole-transport-free perovskite solar cells. SEM indicated that the doping of Ce reduced the diameter of TiO2 nanorods. XRD and EDS spectra demonstrate the successful incorporation of Ce ions. UV-Vis absorption spectra and PL emission spectra show that the down-conversion center Ce4+ can effectively utilize ultraviolet light and extend the absorption into the ultraviolet region. The carbon-based device using the optimized Ce doping concentration achieved power conversion efficiency (PCE) of 10.1%, which was 24.6% higher than that of undoped device. Ce doping changes the band gap of TiO2 and the Fermi energy level, and thus improve the open circuit voltage. The open circuit voltage decay curve show that Ce-doped TiO2 prolongs electron lifetime. EIS analysis hints that more carriers are generated. The UV stability has also been significantly improved., PCE of the optimized Ce-doped device still retains 90% of the initial value, however, the undoped device decreases to 55% of the initial value under light irradiation at ambient atmosphere for 12 h. (C) 2020 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
机构:
Korea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South KoreaKorea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South Korea
Kim, HJ
Song, JS
论文数: 0引用数: 0
h-index: 0
机构:
Korea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South KoreaKorea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South Korea
Song, JS
Koo, BK
论文数: 0引用数: 0
h-index: 0
机构:
Korea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South KoreaKorea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South Korea
Koo, BK
Lee, DY
论文数: 0引用数: 0
h-index: 0
机构:
Korea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South KoreaKorea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South Korea
Lee, DY
Lee, WJ
论文数: 0引用数: 0
h-index: 0
机构:
Korea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South KoreaKorea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South Korea
Lee, WJ
Koh, JH
论文数: 0引用数: 0
h-index: 0
机构:
Korea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South KoreaKorea Electrotechnol Res Inst, Elect & Magnet Devices Res Grp, Chang Won 641120, Gyeongnam, South Korea
Koh, JH
DEVICE AND PROCESS TECHNOLOGIES FOR MEMS, MICROELECTRONICS, AND PHOTONICS III,
2004,
5276
: 507
-
514
机构:
Annamalai Univ, Dept Phys, Annamalainagar 608002, Tamil Nadu, India
Periyar Arts Coll, Dept Phys, Cuddalore 607001, Tamil Nadu, IndiaAnnamalai Univ, Dept Phys, Annamalainagar 608002, Tamil Nadu, India
Venkatachalam, P.
Kalaivani, T.
论文数: 0引用数: 0
h-index: 0
机构:
Annamalai Univ, Dept Phys, Annamalainagar 608002, Tamil Nadu, IndiaAnnamalai Univ, Dept Phys, Annamalainagar 608002, Tamil Nadu, India
Kalaivani, T.
Krishnakumar, N.
论文数: 0引用数: 0
h-index: 0
机构:
Annamalai Univ, Dept Phys, Annamalainagar 608002, Tamil Nadu, IndiaAnnamalai Univ, Dept Phys, Annamalainagar 608002, Tamil Nadu, India
机构:
China Jiliang Univ, Sch Mat Sci & Engn, Hangzhou 310018, Zhejiang, Peoples R ChinaChina Jiliang Univ, Sch Mat Sci & Engn, Hangzhou 310018, Zhejiang, Peoples R China
Wang, Yijie
Zhong, Min
论文数: 0引用数: 0
h-index: 0
机构:
China Jiliang Univ, Sch Mat Sci & Engn, Hangzhou 310018, Zhejiang, Peoples R ChinaChina Jiliang Univ, Sch Mat Sci & Engn, Hangzhou 310018, Zhejiang, Peoples R China
Zhong, Min
Chai, Lei
论文数: 0引用数: 0
h-index: 0
机构:
China Jiliang Univ, Sch Mat Sci & Engn, Hangzhou 310018, Zhejiang, Peoples R ChinaChina Jiliang Univ, Sch Mat Sci & Engn, Hangzhou 310018, Zhejiang, Peoples R China
机构:NE Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Jin, Zhixin
Wang, Yinglin
论文数: 0引用数: 0
h-index: 0
机构:NE Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Wang, Yinglin
Chen, Shixin
论文数: 0引用数: 0
h-index: 0
机构:NE Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Chen, Shixin
Li, Gang
论文数: 0引用数: 0
h-index: 0
机构:NE Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Li, Gang
Wang, Lingling
论文数: 0引用数: 0
h-index: 0
机构:NE Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Wang, Lingling
Zhu, Hancheng
论文数: 0引用数: 0
h-index: 0
机构:NE Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Zhu, Hancheng
Zhang, Xintong
论文数: 0引用数: 0
h-index: 0
机构:
NE Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R ChinaNE Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Zhang, Xintong
Liu, Yichun
论文数: 0引用数: 0
h-index: 0
机构:NE Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China