Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage

被引:12
|
作者
Souto, Jorge [1 ]
Luis Pura, Jose [1 ]
Jimenez, Juan [1 ]
机构
[1] Univ Valladolid, Ed LUCIA, Dept Fis Mat Condensada, GdS Optronlab, P de Belen 11, E-47011 Valladolid, Spain
关键词
high power laser diode; catastrophic optical damage; thermal conductivity; mechanical strengthening; nanoscale effects; finite element methods; GAAS/ALAS SUPERLATTICES; DISLOCATION-MOTION; GAAS; DEGRADATION; CONDUCTIVITY; DEFORMATION; ALXGA1-XAS; STRENGTH; PLASTICITY; DEPENDENCE;
D O I
10.1088/1361-6463/aa6fbd
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work we study the catastrophic optical damage (COD) of graded-index separate confinement heterostructure quantum well (QW) laser diodes based on AlGaAs/GaAs. The emphasis is placed on the impact that the nanoscale physical properties have on the operation and degradation of the active layers of these devices. When these laser diodes run in continuous-wave mode with high internal optical power densities, the QW and guide layers can experiment very intense local heating phenomena that lead to device failure. A thermomechanical model has been set up to study the mechanism of degradation. This model has been solved by applying finite element methods. A variety of physical factors related to the materials properties, which play a paramount role in the laser degradation process, have been considered. Among these, the reduced thicknesses of the QW and the guides lead to thermal conductivities smaller than the bulk figures, which are further reduced as extended defects develop in these layers. This results in a progressively deteriorating thermal management in the device. To the best of our knowledge, this model for laser diodes is the first one to have taken into account low scale mechanical effects that result in enhanced strengths in the structural layers. Moreover, the consequences of these conflicting size-dependent properties on the thermo-mechanical behaviour on the route to COD are examined. Subsequently, this approach opens the possibility of taking advantage of these properties in order to design robust diode lasers (or other types of power devices) in a controlled manner.
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页数:12
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