Origin of blue luminescence in Mg-doped GaN

被引：6
作者：
Wang, Jing [1 ,2 ]
Wang, Xiaodan [3 ]
Shu, Wanzhu [2 ]
Zeng, Xionghui [1 ,2 ]
Chen, Jiafan [1 ,2 ]
Xu, Ke [1 ,2 ]
机构：
[1] Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
[3] Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heat Fluid Flow Tech, Suzhou 215009, Peoples R China
来源：
AIP ADVANCES | 2021年 / 11卷 / 03期
基金：
中国国家自然科学基金; 国家重点研发计划;
关键词：
D O I：
10.1063/5.0037047
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, dual acceptor-bound exciton peaks are observed by low-temperature photoluminescence. The peaks correspond to the dual Mg-related acceptor levels in GaN based on the Haynes rule. By calibrating the energy-level structure, a mechanism for the origin of blue luminescence (BL) in Mg-doped GaN is proposed. The BL band is separated by thermal treatment at different temperatures, confirming the rationality of the dual-factor origin of the BL band. As the annealing temperature increases, the PL spectrum and the p-type conductivity of Mg-doped GaN also change. The experimental results indicate that there is not necessarily a relationship between the BL band and p-type conductivity in GaN grown by metalorganic chemical vapor deposition.
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页数：5
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