Investigations on thermal effects on scratch behavior of monocrystalline silicon via molecular dynamics simulation

被引：24

作者：

Niu, Yihan ^{[1
,2
]}

Zhao, Dan ^{[1
,2
]}

Wang, Shunbo ^{[1
,2
]}

Li, Shichao ^{[1
,2
]}

Wang, Zhaoxin ^{[1
,2
]}

Zhao, Hongwei ^{[1
,2
]}

机构：

[1] Jilin Univ, Key Lab CNC Equipment Reliabil, Minist Educ, 5988 Renmin St, Changchun 130025, Peoples R China

[2] Jilin Univ, Sch Mech & Aerosp Engn, 5988 Renmin St, Changchun 130025, Peoples R China

来源：

MATERIALS TODAY COMMUNICATIONS | 2021年 / 26卷

基金：

国家重点研发计划;

关键词：

Molecular dynamics; Monocrystalline silicon; Scratch; Temperature; SINGLE-CRYSTAL SILICON; PHASE-TRANSFORMATIONS; TEMPERATURE; DIAMOND; MECHANISM;

D O I：

10.1016/j.mtcomm.2021.102042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scratching along monocrystalline silicon [110] crystal orientation at the temperature from 1 K to 1000 K were carried out by molecular dynamics (MD) simulations to study thermal effects on machining performance and subsurface damage mechanisms. Scratch force and phase transformation at different temperatures were studied. The results reveal that high temperatures can induce small scratch force and high material removal rate. Amorphous silicon can always appear beneath the scratched surface, irrespective of temperature. The generation and stability of bct5-Si show high dependence on temperature. At the temperature from 1 K to 500 K, there is bct5-Si generated beneath amorphous silicon during the scratch process, which is not found above 600 K. Bct5-Si beneath amorphous silicon layer keeps stable after scratching at 1 K and 100 K, while is transformed into amorphous silicon at the temperature from 200 K to 500 K.

引用

页数：7

共 28 条

[1] NEW LOW-ENERGY CRYSTAL-STRUCTURE FOR SILICON [J].