Synthesis and photoluminescence characteristics of Eu3+ doped Bi4Si3O12 red emitting phosphor

被引：0
作者：
Lu, Gonggong [1 ,2 ]
Qiu, Kehui [1 ,2 ]
Bu, Yunlei [2 ]
Hou, Xilu [1 ,2 ]
Yuan, Xiqiang [2 ]
机构：
[1] Chengdu Univ Technol, Inst Mat Sci & Technol, Chengdu 610059, Peoples R China
[2] Chengdu Univ Technol, Coll Mat & Chem & Chem Engn, Chengdu 610059, Peoples R China
来源：
PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON MECHATRONICS, MATERIALS, CHEMISTRY AND COMPUTER ENGINEERING 2015 (ICMMCCE 2015) | 2015年 / 39卷
关键词：
Luminescence properties; Bi4Si3O12:Eu3+; LED; Concentration quenching; LUMINESCENCE; DIODE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Eu3+ doped bismuth silicate phosphors, Bi4Si3O12:xEu(3+) (0.01 <= x <= 0.08) were prepared via sol-gel route. XRD results show the phase of the synthesized phosphors calcinated at 650. is isostructural with Bi4Si3O12. Under the excitation of 261nm and 393nm, there are some sharp emission peaks of Eu3+ ions centered at 595nm, 614nm, 654nm and 706nm in the emission spectra of the Eu3+-doped Bi4Si3O12 phosphors. The strongest ones located at 595nm and 614nm are due to D-5(0)-F-7(1), D-5(0)-F-7(2) transition of Eu3+. Luminescence intensity reaches maximum value when the concentration of Eu3+ ions equals 7mol%. The Bi4Si3O12:Eu3+ phosphors may be potentially used as red phosphors for white light-emitting diodes.
引用
收藏
页码：2830 / 2835
页数：6
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